位置：首页 > IC中文资料第6048页 > RQA0009
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N-Channel MOS FET Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) | RENESAS 瑞萨 |   | ||
Silicon N-Channel MOS FET Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65 (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) | RENESAS 瑞萨 | | ||
Power MOSFETs-MOSFETs for high frequency amplifier | RENESAS 瑞萨 | | ||
封装/外壳：TO-243AA 包装：卷带（TR） 描述：MOSFET N-CH 16V 3.2A UPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
Silicon N-Channel MOS FET 文件：223.23 Kbytes Page：22 Pages | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET | RENESAS 瑞萨 | | ||
Power MOSFETs-MOSFETs for high frequency amplifier | RENESAS 瑞萨 | | ||
封装/外壳：TO-243AA 包装：卷带（TR） 描述：MOSFET N-CH 16V 3.2A UPAK 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
Silicon N-Channel MOS FET 文件：223.46 Kbytes Page：22 Pages | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET 文件：223.46 Kbytes Page：22 Pages | RENESAS 瑞萨 | | ||
Photoelectric Sensors BFB M18M-001-P-S4 Basic features Approval/Conformity CE UKCA cULus WEEE Basic standard IEC 60947-5-2 Principle of operation Photoelectric sensor Series 18M Style Cylinder, straight optics | Balluff 巴鲁夫 | | ||
Flyback Transformer 文件：149.64 Kbytes Page：1 Pages | COILCRAFT | | ||
SURFACE-MOUNT BROADBAND BALUN 文件：784.97 Kbytes Page：9 Pages | MARKIMICROWAVE | | ||
HIGH POWER SURFACE-MOUNT BALUN 文件：757.3 Kbytes Page：9 Pages | MARKIMICROWAVE | | ||
Flow Sensors 文件：95.34 Kbytes Page：2 Pages | Balluff 巴鲁夫 | |
RQA0009产品属性
- 类型
描述
- 型号
RQA0009
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESASA |
24+ |
NA/ |
714 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESASA |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
VBSEMI微碧半导体 |
2450+ |
SOT-89-3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
RENESASA |
26+ |
SOT-89 |
360000 |
进口原装现货 |
|||
RENESASA |
NEW |
SOT-89 |
21082 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESASA |
24+ |
SOT-89 |
16900 |
原装正品现货支持实单 |
|||
RENESASA |
22+ |
SOT-89 |
20000 |
公司只做原装 品质保障 |
|||
RENESASA |
23+ |
SOT-89 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RENESAS/瑞萨 |
2447 |
SOT-89 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
RQA0009芯片相关品牌
RQA0009规格书下载地址
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RQA0009数据表相关新闻
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