丝印代码：50N60；N-Channel Enhancement Mode Power MOSFET

文件：228.07 Kbytes Page：7 Pages

MOSFET

丝印代码：50N60；N-Channel Enhancement Mode Power MOSFET

General Features VDS =60V,ID =50A RDS(ON) 16mΩ @ V GS=10V RDS(ON) 20mΩ @ VGS=4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation

LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

HiPerFASTTM IGBT

Features • International standard package SOT-227B • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) for minimum on-state conduction losses • MOS Gate turn-on drive simplicity • Low collector-to-cas

Short Circuit Rated IGBT

General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i

Short Circuit Rated IGBT

文件：563.62 Kbytes Page：7 Pages