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IGB50N60T价格
参考价格：￥15.3692
型号：IGB50N60T 品牌：Infineon 备注：这里有IGB50N60T多少钱，2026年最近7天走势，今日出价，今日竞价，IGB50N60T批发/采购报价，IGB50N60T行情走势销售排行榜，IGB50N60T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IGB50N60T | LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications | INFINEON 英飞凌 |   | |
IGB50N60T | 600 V、50 A IGBT 分立器件，采用 TO263 封装 | INFINEON 英飞凌 | | |
IGB50N60T | Low Loss IGBT in TrenchStop technology 文件：467.71 Kbytes Page：12 Pages | INFINEON 英飞凌 | | |
IGB50N60T | Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology 文件：648.1 Kbytes Page：12 Pages | INFINEON 英飞凌 | | |
Low Loss IGBT in TrenchStop technology 文件：467.71 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
Low Loss IGBT : IGBT in TRENCHSTOP??and Fieldstop technology 文件：648.1 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT TRENCH 600V 100A TO263-3-2 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | ||
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
| INFINEON 英飞凌 | | ||
HiPerFASTTM IGBT Features • International standard package SOT-227B • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) for minimum on-state conduction losses • MOS Gate turn-on drive simplicity • Low collector-to-cas | IXYS 艾赛斯 | | ||
Short Circuit Rated IGBT General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i | FAIRCHILD 仙童半导体 | | ||
Short Circuit Rated IGBT 文件：563.62 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | |
IGB50N60T产品属性
- 类型
描述
- 型号
IGB50N60T
- 功能描述
IGBT 晶体管 LOW LOSS IGBT TECH 600V 50A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
25+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon(英飞凌) |
24+ |
P-TO-263-3 |
2524 |
原厂直供,支持账期,免费供样,技术支持 |
|||
INFINEON/英飞凌 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON |
24+ |
P-TO-263-3-2 |
8866 |
||||
INFINEON |
24+ |
P-TO-263-3 |
15000 |
原装原标原盒 给价就出 全网最低 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
公司只做原装，可来电咨询 |
|||
Infineon(英飞凌) |
2447 |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
Infineon(英飞凌) |
25+ |
TO-263-3 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
IGB50N60T规格书下载地址
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DdatasheetPDF页码索引
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