Short Circuit Rated IGBT

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Short Circuit Rated IGBT

IGBT，600V，50A，短路额定

飞兆半导体的 RUFD 绝缘栅极双极性晶体管 (IGBT) 系列提供低导通和开关损耗，以及短路耐用性。RUFD 系列专为电机控制、不间断电源 (UPS) 和一般逆变器等短路耐用性是必需功能的应用而设计。 •50A, 600V, TC = 100°C\n•低饱和电压：V CE(sat) = 2.2 V @ I C = 50A\n•典型下降时间。. . . . . . . . TJ = 125°C时为0.261ns\n•高速开关\n•高输入阻抗\n•短路额定值;

Short Circuit Rated IGBT

General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i

600 V, 50 A Short Circuit Rated IGBT

General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i

600 V, 50 A Short Circuit Rated IGBT

General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i

Short Circuit Rated IGBT

文件：563.62 Kbytes Page：7 Pages

封装/外壳：TO-264-3，TO-264AA 包装：管件 描述：IGBT 600V 80A TO264-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-264-3，TO-264AA 包装：管件 描述：IGBT 600V 80A 250W TO264 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT 600V 80A 250W TO264

LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

HiPerFASTTM IGBT

Features • International standard package SOT-227B • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) for minimum on-state conduction losses • MOS Gate turn-on drive simplicity • Low collector-to-cas