HiPerFASTTM IGBT

Features • International standard package SOT-227B • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT • Low VCE(sat) for minimum on-state conduction losses • MOS Gate turn-on drive simplicity • Low collector-to-cas

封装/外壳：SOT-227-4，miniBLOC 包装：散装 描述：IGBT MOD 600V 75A 300W SOT227B 分立半导体产品 晶体管 - IGBT - 模块

PT IGBTs

HiPerFAST IGBT with HiPerFRED

HiPerFAST™ IGBT with HiPerFRED Buck & boost configurations Features • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT & FRED diode • MOS Gate turn-on - drive sim

HiPerFAST IGBT with HiPerFRED

HiPerFAST™ IGBT with HiPerFRED Buck & boost configurations Features • International standard package miniBLOC • Aluminium nitride isolation - high power dissipation • Isolation voltage 3000 V~ • Very high current, fast switching IGBT & FRED diode • MOS Gate turn-on - drive sim

封装/外壳：SOT-227-4，miniBLOC 包装：托盘 描述：IGBT MOD 600V 75A 250W SOT227B 分立半导体产品 晶体管 - IGBT - 模块

LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY

Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Short Circuit Rated IGBT

General Description Fairchild®’s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general i

Short Circuit Rated IGBT

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