AdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance.

Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free

MOSFET

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

N-Channel Power MOSFET

文件：352.19 Kbytes Page：7 Pages

N-Channel Enhancement Mode MOSFET

文件：253.23 Kbytes Page：4 Pages

isc N-Channel MOSFET Transistor

文件：380.61 Kbytes Page：2 Pages