Advance Technical Information High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Eas

isc N-Channel MOSFET Transistor

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N-Channel Power MOSFET

LinearL2™ Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Features • Designed for Linear Operation • International Standard Package • Avalanche Rated • Guaranteed FBSOA at 75°C Advantages • Easy to Mount • Space Savings • High Power Density Applications • Solid State Circuit

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

N-Channel Power MOSFET

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N-Channel Enhancement Mode MOSFET

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