Advance Technical Information High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Eas

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

isc N-Channel MOSFET Transistor

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N通道线性MOSFET

• 专为线性操作设计\n• 75°C条件下FBSOA得到保证\n• 低导通电阻RDS(on)\n• 雪崩评级\n• 国际标准包装\n• 拥有UL 94 V-0易燃性认证 成型环氧树脂;

N-Channel Power MOSFET

LinearL2™ Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Features • Designed for Linear Operation • International Standard Package • Avalanche Rated • Guaranteed FBSOA at 75°C Advantages • Easy to Mount • Space Savings • High Power Density Applications • Solid State Circuit

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

Advance Technical Information High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Eas

Avalanche Rated N-channel MOSFET

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Avalanche Rated N-channel MOSFET

文件：123.35 Kbytes Page：2 Pages