300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

300V, 50A PDP IGBT

300V, 50A PDP IGBT

General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 300V 46.8W TO220F 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Advance Technical Information High Current Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Eas

Avalanche Rated N-channel MOSFET

文件：123.35 Kbytes Page：2 Pages

Avalanche Rated N-channel MOSFET

文件：123.35 Kbytes Page：2 Pages