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RM4价格
参考价格：￥124.7867
型号：RM415 品牌：AIM-TTI 备注：这里有RM4多少钱，2025年最近7天走势，今日出价，今日竞价，RM4批发/采购报价，RM4行情走势销售排行榜，RM4报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RM4 | Rectifier Diodes RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 |  |   |
RM4 | xDSL POTs Splitter ◆ProductDescription ◾13.0×13.0mmMax.(L×W),10.92mmMax.Height. ◆Feature ◾SmallfootprintforCentralOfficeapplications. ◾ForusewithLegerity’sItergratedVoiceandData(IVD)solution. ◾Customizedinductancevaluesavailable. ◾RoHSCompliance. | SUMIDASumida America Components Inc. 胜美达电子 |  | |
RM4 | Silicon Diode Scope ThepresentspecificationsshallapplytoanRM4. Outline TypeSiliconDiode StructureResinMolded ApplicationsCommercialFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | |
RM4 | SILICON RECTIFIER DIODES 文件：45.4 Kbytes Page：2 Pages | EIC EIC discrete Semiconductors |  | |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IF...................................................................400A ●VRRM......................................................3300V ●HighInsulatedType ●2-elementinaPack ●AlSiCBaseplate APPLICATION Tractiondrives,HighReliabi | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
Super Fast Recovery Dual Diode Module 400 Amperes/1200 Volts Description: PowerexSuperFastRecoveryDualDiodemodulesaredesignedforuseinapplicationsrequiringfastswitching.Themodulesareisolatedforeasymountingwithothercomponentsoncommonheatsinks. Features: □DiscreteSuper-FastRecovery Free-WheelDiode □IsolatedCopperBasep | POWEREX Powerex Power Semiconductors |  | | |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE HIGHPOWER,HIGHSPEEDSWITCHINGUSEINSULATEDTYPE ●IDC..............................................................400A ●VRRM....................................................3300V ●Insulatedtype ●2-elementsinapack APPLICATION 3-levelinverters,3-levelconvert | POWEREX Powerex Power Semiconductors | | | |
HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IF...................................................................400A ●VRRM......................................................3300V ●InsulatedType ●2-elementinaPack ●CopperBaseplate APPLICATION Tractiondrives,High | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IF...................................................................400A ●VRRM......................................................3300V ●InsulatedType ●2-elementinaPack ●CopperBaseplate APPLICATION Tractiondrives,High | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IF...................................................................400A ●VRRM......................................................3300V ●InsulatedType ●2-elementinaPack ●CopperBaseplate APPLICATION Tractiondrives,High | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH SPEED SWITCHING USE INSULATED TYPE HIGHSPEEDSWITCHINGUSEINSULATEDTYPE •IDCDCcurrent................................400A •VRRMRepetitivepeakreversevoltage........1000/1200V •trrReverserecoverytime.............0.4µs •InsulatedType •ULRecognizedYellowCardNo.E80276(N)FileNo.E80271 APPLICATION | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Super Fast Recovery Single Diode Module (400 Amperes/1200 Volts) Description: PowerexSuper-FastRecoverySingleDiodeModulesaredesignedforuseinapplicationsrequiringfastswitching.Themodulesareisolatedforeasymountingwithothercomponentsoncommonheatsinks. Features: □IsolatedMounting □PlanarChips Applications: □Inverters □Choppe | POWEREX Powerex Power Semiconductors | | | |
HIGH SPEED SWITCHING USE INSULATED TYPE HIGHSPEEDSWITCHINGUSEINSULATEDTYPE •IDCDCcurrent................................400A •VRRMRepetitivepeakreversevoltage........1000/1200V •trrReverserecoverytime.............0.4µs •InsulatedType •ULRecognizedYellowCardNo.E80276(N)FileNo.E80271 APPLICATION | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Super Fast Recovery Single Diode Module (400 Amperes/1700 Volts) Description: PowerexSuper-FastRecoverySingleDiodeModulesaredesignedforuseinapplicationsrequiringfastswitching.Themodulesareisolatedforeasymountingwithothercomponentsoncommonheatsinks. Features: □IsolatedMounting □PlanarChips Applications: □Inverters □Chopper | POWEREX Powerex Power Semiconductors | | | |
HIGH SPEED SWITCHING USE INSULATED TYPE HIGHSPEEDSWITCHINGUSEINSULATEDTYPE •IDCDCcurrent................................400A •VRRMRepetitivepeakreversevoltage..................1700V •trrReverserecoverytime.............0.4µs •InsulatedType •ULRecognizedYellowCardNo.E80276(N)FileNo.E80271 APPLICATI | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=40V,ID=400A RDS(ON) | RECTRON Rectron Semiconductor |  | | |
N and P-Channel Enhancement Mode Power MOSFET GeneralFeatures N-Channel VDS=40V,ID=6.7A RDS(ON) | RECTRON Rectron Semiconductor | | | |
N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=200V,ID=40A RDS(ON) | RECTRON Rectron Semiconductor | | | |
N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=40V,ID=40A RDS(ON) | RECTRON Rectron Semiconductor | | | |
N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=40V,ID=42A RDS(ON) | RECTRON Rectron Semiconductor | | | |
600V, 40A, Trench FS II IGBT Features TrenchFSIITechnologyoffering VerylowVCE（sat） Highspeedswitching PositivetemperaturecoefficientinVCE（sat） Verytightparameterdistribution Highruggedness,temperaturestablebehavior | RECTRON Rectron Semiconductor | | | |
Fixed 15V Dual Tracking Voltage Regulator Description TheRM/RC4195isadualpolaritytrackingregulatordesignedtoprovidebalancedpositiveandnegative15Voutputvoltagesatcurrentsupto100mA.Thisdeviceisdesignedforlocalon-cardregulation,eliminatingdistributionproblemsassociatedwithsinglepointregulation.There | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Fixed 15V Dual Tracking Voltage Regulator Description TheRM/RC4195isadualpolaritytrackingregulatordesignedtoprovidebalancedpositiveandnegative15Voutputvoltagesatcurrentsupto100mA.Thisdeviceisdesignedforlocalon-cardregulation,eliminatingdistributionproblemsassociatedwithsinglepointregulation.There | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Fixed 15V Dual Tracking Voltage Regulator Description TheRM/RC4195isadualpolaritytrackingregulatordesignedtoprovidebalancedpositiveandnegative15Voutputvoltagesatcurrentsupto100mA.Thisdeviceisdesignedforlocalon-cardregulation,eliminatingdistributionproblemsassociatedwithsinglepointregulation.There | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Fixed 15V Dual Tracking Voltage Regulator Description TheRM/RC4195isadualpolaritytrackingregulatordesignedtoprovidebalancedpositiveandnegative15Voutputvoltagesatcurrentsupto100mA.Thisdeviceisdesignedforlocalon-cardregulation,eliminatingdistributionproblemsassociatedwithsinglepointregulation.There | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=200V,ID=42A RDS(ON) | RECTRON Rectron Semiconductor | | | |
P-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=-30V,ID=-42A RDS(ON) | RECTRON Rectron Semiconductor | | | |
N and P-Channel Enhancement Mode Power MOSFET GeneralFeatures N-Channel VDS=30V,ID=10A RDS(ON) | RECTRON Rectron Semiconductor | | | |
N and P-Channel Enhancement Mode Power MOSFET GeneralFeatures N-Channel VDS=30V,ID=10A RDS(ON) | RECTRON Rectron Semiconductor | | | |
N-Channel Enhancement Mode MOSFET Features Surface-mountedpackage Advancedtrenchcelldesign SuperTrench MSL1 BV≥100VPtot≤500WID≤450A RDS(ON)≤1.25mΩ@VGS=10V RDS(ON)≤1.85mΩ@VGS=6V | RECTRON Rectron Semiconductor | | | |
POWER FIELD EFFECT TRANSISTOR FEATURES RobustHighVoltageTermination AvalancheEnergySpecified Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircuits IDSSandVDS(on)SpecifiedatElevatedTemperature IsolatedMountingHoleReducesMountingHar | RECTRON Rectron Semiconductor | | | |
POWER FIELD EFFECT TRANSISTOR FEATURES RobustHighVoltageTermination AvalancheEnergySpecified Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircuits IDSSandVDS(on)SpecifiedatElevatedTemperature IsolatedMountingHoleReducesMountingHar | RECTRON Rectron Semiconductor | | | |
N-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=60V,ID=45A RDS(ON) | RECTRON Rectron Semiconductor | | | |
N-Channel Trench MOSFET Features HighEfficiency LowDenseCellDesign VDS>80V RDS(ON) | RECTRON Rectron Semiconductor | | | |
R. F. Molded Chokes [OhmiteMfg.Co.] | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | | |
R. F. Molded Chokes [OhmiteMfg.Co.] | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | | |
General Purpose Operation Amplifier
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
General Purpose Operation Amplifier
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
General Purpose Operation Amplifier
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Power Field Effect Transistor FEATURES RobustHighVoltageTermination AvalancheEnergySpecified Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircuits lossandVos(on)SpecifiedatElevatedTemperature. IsolatedMountingHoleReducesMounting | RECTRON Rectron Semiconductor | | | |
Power Field Effect Transistor FEATURES RobustHighVoltageTermination AvalancheEnergySpecified Source-to-DrainDiodeRecoveryTimeComparabletoa DiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircuits lossandVos(on)SpecifiedatElevatedTemperature. IsolatedMountingHoleReducesMounting | RECTRON Rectron Semiconductor | | | |
30 AMP MODULAR SWITCHED MODE RECTIFIER DESCRIPTION TheRM4830ModularSwitched-ModeRectifierisoneofC&DTechnologies’familyofrectifiersthatmaybeusedinmodularpowerplants.Thisunitwillfunctioninparallelwithanyrectifierwithsimilarcurrentsharingcapacities.Thiscompact,versatileandefficientunitisideal | CANDD C&D Technologies |  | | |
50 AMP MODULAR SWITCHED MODE RECTIFIER DESCRIPTION TheRM4850ModularSwitch-ModeRectifierisoneofC&DTechnologies’familyofrectifiersthatmaybeusedinmodularpowerplants.Thishighpowerunitwillfunctioninparallelwithanyrectifierwithsimilarcurrentsharingcapacities.Thisversatileandefficientrectifieris | CANDD C&D Technologies | | | |
7.5 AMP Modular Switch Mode Rectifier DESCRIPTION TheRM487.5ModularSwitch-ModeRectifierisoneofC&DTechnologies’familyofrectifiersthatmaybeusedinmodularpowerplants.Thisunitwillfunctioninparallelwithanyrectifierwithsimilarcurrentsharingcapacities.Thiscompact,versatileandefficientunitisideal | CANDD C&D Technologies | | | |
N-Channel Super Trench Power MOSFET GeneralFeatures VDS=100V,ID=48A RDS(ON) | RECTRON Rectron Semiconductor | | | |
Rectifier Diodes RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 | | | |
Silicon Diode Scope ThepresentspecificationsshallapplytoanRM4A. Outline TypeSiliconDiode StructureResinMolded ApplicationsCommercialFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Rectifier Diodes RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 | | | |
Silicon Rectifier Diode Scope ThepresentspecificationsshallapplytoSankensilicondiode,RM4AM. Outline TypeSiliconRectifierDiode StructureResinMoldedFlammability:UL94V-0(Equivalent) ApplicationsCommercialFrequencyRectification | SankenSanken electric 三垦三垦电气株式会社 | | | |
Rectifier Diodes RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 | | | |
Rectifier Diodes RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 | | | |
Silicon Diode Scope ThepresentspecificationsshallapplytoanRM4C. Outline TypeSiliconDiode StructureResinMolded ApplicationsCommercialFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
N-Channel Super Junction Power MOSFET Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses Smallpackage UitraLowGateChargecauselowerdrivingrequirements 100%AvalancheTested ROHScompliant | RECTRON Rectron Semiconductor | | | |
N-Channel Super Junction Power MOSFET Features Newtechnologyforhighvoltagedevice Lowon-resistanceandlowconductionlosses. Smallpackage UltraLowGateChargecauselowerdrivingrequirements. 100%AvalancheTested ROHScompliant | RECTRON Rectron Semiconductor | | | |
P-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=-20V,ID=-4.1A RDS(ON)2000V | RECTRON Rectron Semiconductor | | | |
P-Channel Enhancement Mode Power MOSFET GeneralFeatures VDS=-20V,ID=-4.1A RDS(ON) | RECTRON Rectron Semiconductor | | | |
P -Ch 30V Fast Switching MOSFETs GreenDeviceAvailable SuperLowGateCharge ExcellentCdV/dteffectdecline AdvancedhighcelldensityTrench technology Halogen-free P/NsuffixVmeansAEC-Q101qualified,e.g:RM4P30S6V | RECTRON Rectron Semiconductor | | | |
Rectifier Diodes RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 | | | |
Silicon Rectifier Diode Scope ThepresentspecificationsshallapplytoSankensilicondiode,RM4Y. Outline TypeSiliconRectifierDiode(Mesatype) StructureResinMoldedFlammability:UL94V-0(Equivalent) ApplicationsCommercialFrequencyRectification,etc. | SankenSanken electric 三垦三垦电气株式会社 | | | |
Rectifier Diodes RectifierDiodes | SankenSanken electric 三垦三垦电气株式会社 | | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual Operational Amplifiers | PanasonicPanasonic Semiconductor 松下松下电器 |  | | |
Dual Operational Amplifiers | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
Dual Low Noise, High Slew Rate Operational Amplifiers | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
Dual operational amplifier | ROHMRohm 罗姆罗姆半导体集团 |  | | |
Dual Operational Amplifier | ROHMRohm 罗姆罗姆半导体集团 | | | |
HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
HIGH-GAIN SINGLE AND DUAL OPERATIONAL AMPLIFIERS FOR MILITARY INDUSTRIAL AND COMMERCIAL APPLICATIONS | HARRISHarris Corporation |  | | |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation |  | | |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | | | |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | | | |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | | | |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | | | |
Dual Operational Amplifier | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
Dual Operational Amplifier | HitachiHitachi Semiconductor 日立日立公司 |  | | |
Dual Operational Amplifier | HitachiHitachi Semiconductor 日立日立公司 | | | |
Dual Operational Amplifier | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Performance Dual Operational Amplifiers | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  | | |
Dual Operational Amplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |  | | |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | | | |
Dual Operational Amplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | | |
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HIGH-GAIN SINGLE AND DUAL OPERATIONAL AMPLIFIERS FOR MILITARY INDUSTRIAL AND COMMERCIAL APPLICATIONS | HARRISHarris Corporation | | | |
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Dual Operational Amplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | | |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | | | |
0.9MHz Single and Dual, High Gain Operational Amplifiers for Military, Industrial and Commercial Applications | IntersilIntersil Corporation | | | |
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Dual Operational Amplifier | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | | |
DUAL SINGLE POWER SUPPLY OPERATIONAL AMPLIFIERS | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
DUAL OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
General purpose operational amplifier | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
DUAL OPERATIONAL AMPLIFIER | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
DUAL OPERATIONAL AMPLIFIER | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
DUAL OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
General purpose operational amplifier | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DUAL OPERATIONAL AMPLIFIER | NJRCNew Japan Radio 新日本无线株式会社 |  | | |
DUAL OPERATIONAL AMPLIFIER | NJRCNew Japan Radio 新日本无线株式会社 | | | |
DUAL OPERATIONAL AMPLIFIER | NJRCNew Japan Radio 新日本无线株式会社 | | | |
Integrated Circuit Dual Operational Amplifier | NTENTE Electronics |  | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
Dual High-Gain Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL GENERAL-PURPOSE OPERATIONAL AMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  | | |
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIERS | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
INDUSTRIAL LINEAR ICS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | | |
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIERS | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
GENERAL PURPOSE DUAL OPERATIONAL AMPLIFIERS | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
INDUSTRIAL LINEAR ICS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | | |
Bipolar Analog Integrated Circuit | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
HIGH PERFORMANCE DUAL OPERATIONAL AMPLIFIER | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
Bipolar Analog Integrated Circuit | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | | | |
INDUSTRIAL LINEAR ICS | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | |
RM4产品属性
- 类型
描述
- 型号
RM4
- 功能描述
控制器
- RoHS
否
- 制造商
Omron Industrial
- 模拟/数字
Digital
- 类型
Digital Temperature Controller
- 显示器类型
11-Segment, 4 Digit
- 电源电压
100 VAC to 240 VAC
- 大小
48 mm x 48 mm
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
23+ |
SOD-323 |
102 |
全新原装正品现货,支持订货 |
|||
TI |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
MITSUBISHI |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
MITSUBISHI |
23+ |
模块 |
100 |
全新原装热卖/假一罚十!更多数量可订货 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
MITSUBISH |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TI(德州仪器) |
23+ |
LQFP-144 |
13650 |
公司只做原装正品,假一赔十 |
|||
TI/德州仪器 |
21+ |
LQFP-100 |
498 |
十年专营,原装现货,假一赔十 |
|||
Texas Instruments |
24+ |
NA |
38099 |
TI优势主营型号-原装正品 |
|||
TI |
21+ |
LQFP144 |
1356 |
十年信誉,只做原装,有挂就有现货! |
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RM4规格书下载地址
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2020-10-23
DdatasheetPDF页码索引
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