600V - 22A - IGBT Application: Inverter

Features ● High breakdown-voltage ● Low Collector to Emitter saturation Voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) ● Short circuit withstand time (6 s typ.) ● Trench gate and thin wafer technology (G6H series)

600V - 22A - IGBT Application: Inverter

600V - 22A - IGBT Application: Inverter Features  High breakdown-voltage  Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. (at IC= 22 A, VGE= 15 V, Ta = 25°C)  Short circuit withstand time (6 s typ.)  Trench gate and thin wafer technology (G6

600V - 22A - IGBT Application: Inverter

600V - 22A - IGBT Application: Inverter Features  High breakdown-voltage  Low collector to emitter saturation voltage VCE(sat)= 1.5 V typ. (at IC= 22 A, VGE= 15 V, Ta = 25°C)  Short circuit withstand time (6 s typ.)  Trench gate and thin wafer technology (G6

600V - 22A - IGBT Application: Inverter

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封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 45A 40W TO-3PFM 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBTs

600V - 22A - IGBT Application: Inverter

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SMD ESD Protection Diode

Features - High component density. - Surface mount package. - Bi-directional ESD protection. - Low clamping voltage. - Low leakage. - AEC-Q101 Qualified & PPAP.