600V - 40A - IGBT High Speed Power Switching

Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)

600 V - 40 A - IGBT High Speed Power Switching

600V - 40A - IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat)= 1.37 V typ. (IC= 40 A, VGE= 15 V, Ta = 25°C)  Trench gate and thin wafer technology  High speed switching tf= 85 ns typ. (at IC= 30 A, VCE= 400 V,

IGBTs

600V - 40A - IGBT High Speed Power Switching

文件：86.23 Kbytes Page：7 Pages

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 80A 260.4W 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBTs

600V - 40A - IGBT High Speed Power Switching

文件：84 Kbytes Page：7 Pages

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 80A 45W TO-3PFM 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω

Silicon N Channel IGBT High Speed Power Switching

Features • High speed switching • Low on-state voltage • Fast recovery diode

600 V - 40 A - IGBT High Speed Power Switching

文件：94.79 Kbytes Page：8 Pages

Silicon N Channel IGBT High Speed Power Switching

文件：86.04 Kbytes Page：7 Pages