600V-12A-SJMOSFETHighSpeedPowerSwitching

Features •SuperjunctionMOSFET •Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) •Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25°C)

600V-12A-SJMOSFETHighSpeedPowerSwitching

Features •SuperjunctionMOSFET •Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) •Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25°C)

600V-12A-SJMOSFETHighSpeedPowerSwitching

Features ●SuperjunctionMOSFET ●Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) ●Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50Ω,Rg=10,Ta=25°C)

600V-12A-SJMOSFETHighSpeedPowerSwitching

Features ●SuperjunctionMOSFET ●Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) ●Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50Ω,Rg=10,Ta=25°C)

600V-12A-SJMOSFETHighSpeedPowerSwitching

*SuperjunctionMOSFET *Lowon-resistance *RDS(on)=0.35typ.(atID=6A,VGS=10V,Ta=25C) *Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25C)

600V-12A-SJMOSFETHighSpeedPowerSwitching

*SuperjunctionMOSFET *Lowon-resistance *RDS(on)=0.35typ.(atID=6A,VGS=10V,Ta=25C) *Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25C)

THEGLOBALEXPERTINSOLIDSTATERELAYTECHNOLOGY

DPASeries •16PinDIPSSR •Ratingsto1A@280VAC •SCRoutput •Voltageorcurrent-controlinput •Zero-crossing(resistiveloads)output

PANELMOUNT

Features •Ratingsfrom3Ato7A@60VDC •Bi-PolarTransistorOutput •ULApproved,CEComplianttoEN60950-1 •ImprovedSEMSScrewandWasher •RedesignedHousingwithAnti-RotationBarriers •ACandDCControl •EpoxyFreeDesign

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panelmount

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