Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Power MOSFETs

N-Channel 650 V (D-S) MOSFET

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N-Channel MOSFET uses advanced trench technology

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance • Low leakage current • High speed switching

Silicon N Channel MOS FET High Speed Power Switching

文件：113.36 Kbytes Page：9 Pages

PLUGS AND JACKS

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Security & Sound, #12-4c, BC, CL2P

Product Description Security & Sound Cable, Plenum-CL2P 4-12 AWG stranded bare copper conductors with Flamarrest® insulation, Flamarrest® jacket with ripcord

Heavy Duty Male Blades for Range and Dryer

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3M??Reusable Respirators

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Interconnection Cord with Plug 6A 3pole, Straight

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