Silicon N Channel MOS FET High Speed Power Switching

Features Low on-resistance RDS(on) = 0.515Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25℃) Low leakage current High speed switching

Silicon N Channel MOS FET High Speed Power Switching

文件：89.01 Kbytes Page：7 Pages

Silicon N Channel MOS FET High Speed Power Switching

Features Low on-resistance RDS(on) = 0.515Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25℃) Low leakage current High speed switching

Silicon N Channel MOS FET High Speed Power Switching

文件：89.01 Kbytes Page：7 Pages

Silicon N Channel MOS FET High Speed Power Switching

文件：89.01 Kbytes Page：7 Pages

Silicon N Channel MOS FET High Speed Power Switching

文件：89.01 Kbytes Page：7 Pages

N-Channel 650V (D-S)Power MOSFET

文件：1.10597 Mbytes Page：10 Pages

AN-1713 LM5116-12 Evaluation Board

Introduction The LM5116-12 evaluation board is designed to provide the design engineer with a fully functional power converter based on Emulated Current Mode Control to evaluate the LM5116 controller IC. The evaluation board provides a 12V output with a 5A current capability. The operating inpu

THM TEST POINTS

(THM)THRU HOLE MOUNT TEST POINTS-COLOR KEYED •Color keyed for visibility and quick identification •Economical choice for PC test point terminations •Snap-fit mounting provides positive retention for wave soldering •Wire form loop for safe, non-sliptesting •Space saving, ultra low

2-A to 6-A Integrated Power Solution

文件：372.11 Kbytes Page：13 Pages

TPS84250EVM-001 2.5-A, Integrated Power Solution

文件：606.19 Kbytes Page：19 Pages

Customer Specification

文件：71.15 Kbytes Page：3 Pages