型号 功能描述 生产厂家 企业 LOGO 操作
RJK5012DPE

Silicon N Channel MOS FET High Speed Power Switching

Features Low on-resistance RDS(on) = 0.515Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25℃) Low leakage current High speed switching

RENESAS

瑞萨

RJK5012DPE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.62Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

RJK5012DPE

Silicon N Channel MOS FET High Speed Power Switching

文件:89.01 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features Low on-resistance RDS(on) = 0.515Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25℃) Low leakage current High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:89.01 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

文件:89.01 Kbytes Page:7 Pages

RENESAS

瑞萨

N-Channel 650V (D-S)Power MOSFET

文件:1.10597 Mbytes Page:10 Pages

VBSEMI

微碧半导体

Silicon N Channel MOS FET High Speed Power Switching

文件:89.01 Kbytes Page:7 Pages

RENESAS

瑞萨

THM TEST POINTS

(THM)THRU HOLE MOUNT TEST POINTS-COLOR KEYED •Color keyed for visibility and quick identification •Economical choice for PC test point terminations •Snap-fit mounting provides positive retention for wave soldering •Wire form loop for safe, non-sliptesting •Space saving, ultra low

ETCList of Unclassifed Manufacturers

未分类制造商

AN-1713 LM5116-12 Evaluation Board

Introduction The LM5116-12 evaluation board is designed to provide the design engineer with a fully functional power converter based on Emulated Current Mode Control to evaluate the LM5116 controller IC. The evaluation board provides a 12V output with a 5A current capability. The operating inpu

TI

德州仪器

(THM) THRU HOLE MOUNT TEST POINTS - COLOR KEYED

• Color keyed for visibility and quick identification • Economical choice for PC test point terminations • Snap-fit mounting provides positive retention for wave soldering • Wire form loop for safe, non-slip testing • Space saving, ultra low and low profile designs • High profile design for d

MOLEX

莫仕

2-A to 6-A Integrated Power Solution

文件:372.11 Kbytes Page:13 Pages

TI

德州仪器

TPS84250EVM-001 2.5-A, Integrated Power Solution

文件:606.19 Kbytes Page:19 Pages

TI

德州仪器

RJK5012DPE产品属性

  • 类型

    描述

  • 型号

    RJK5012DPE

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOS FET High Speed Power Switching

更新时间:2026-3-1 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
22+
TO-251
20000
公司只做原装 品质保障
RENESAS
24+
TO-251
16900
原装正品现货支持实单
RENESAS
24+
TO-251
18000
原装正品 有挂有货 假一赔十
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
21+
TO-251
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
2023+
TO-251
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS
23+
TO-251
50
全新原装正品现货,支持订货
RENESAS
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
RENESAS
2511
TO-251
50
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS/瑞萨
23+
LDPAK
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO

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