位置：首页 > IC中文资料第10793页 > RJK2017DPE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJK2017DPE | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 °C) • Low leakage current • High speed switching | RENESAS 瑞萨 |   | |
RJK2017DPE | Silicon N Channel MOS FET High Speed Power Switching | RENESAS 瑞萨 | | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 °C) • Low leakage current • High speed switching | RENESAS 瑞萨 | | ||
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Low Phase Noise VCXO with multipliers (for 65-130MHz Fund Xtal) 文件：79.69 Kbytes Page：7 Pages | ABRACON | |
RJK2017DPE产品属性
- 类型
描述
- 型号
RJK2017DPE
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2016+ |
TO-263 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS |
10+ |
TO-263 |
4180 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
24+ |
TO-263 |
16900 |
原装正品现货支持实单 |
|||
RENESAS(瑞萨)/IDT |
20+ |
- |
1000 |
||||
RENESAS |
10+ |
TO-263 |
15979 |
||||
RENESAS |
24+ |
TO-263-2 |
28600 |
一级代理/全新现货/长期供应! |
|||
RENESAS |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2023+ |
TO-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
RJK2017DPE规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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