Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

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Mechanical Cam Switches

BNS 816-B08-PA-12-602-11 Basic features Approval/Conformity CE UKCA WEEE Basic standard IEC 60947-5-2 DIN switch DIN 43697 Operating principle 1-8. Switch position: Inductive Version Inductive

SILICON PHOTO TRANSISTOR

APPLICATIONS ● Remote Control , ● Photo Detector, ● Smoke Detector, ● Automatic Control System ● Optical Encoder ABSOLUTE MAXIMUM RATINGS (Ta=25 ) ● Collector-to-Emitter Saturation Voltage Vce(SAT) .(Ib=100uA) /Ic=2mA......... 0.4V( Max. ) ● Emitter-to-collector Breakdown Voltage(BVeco)......

INFRARED EMITTING DIODES

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BPT-NP13C1

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SIDE- LOOK PACKAGE PHOTOTRANSISTOR

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