位置：首页 > IC中文资料第8458页 > RJK0389DPA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJK0389DPA | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free | RENESAS 瑞萨 |   | |
RJK0389DPA | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 文件：358.72 Kbytes Page：11 Pages | RENESAS 瑞萨 | | |
RJK0389DPA | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 文件：169.26 Kbytes Page：11 Pages | RENESAS 瑞萨 | | |
RJK0389DPA | Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching | RENESAS 瑞萨 | | |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free | RENESAS 瑞萨 | | ||
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 文件：358.72 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 文件：169.26 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 文件：169.26 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 文件：358.72 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Double-Ended Cordsets BCC M415-M413-3A-300-VX8334-015 Basic features Approval/Conformity CE cULus WEEE | Balluff 巴鲁夫 | | ||
RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 Features • Low-noise use : NF=1.1dB typ (f=2GHz) • High cut-off frequency : fT=25GHz typ (VCE=3V) • Low operating voltage • High gain : |S21e|2=17dB typ (f=2GHz) • Halogen free compliance | ONSEMI 安森美半导体 | | ||
UHF to X Band Low-Noise Amplifier and OSC Applications 文件：476.42 Kbytes Page：15 Pages | SANYO 三洋 | | ||
PolyTuff® Non-Metallic Liquidtight Fittings 文件：165.45 Kbytes Page：1 Pages | HUBBELL HUBBELL INCORPORATED | | ||
PolyTuff® Non-Metallic Liquidtight Fittings 文件：165.45 Kbytes Page：1 Pages | HUBBELL HUBBELL INCORPORATED | |
RJK0389DPA产品属性
- 类型
描述
- 型号
RJK0389DPA
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
920 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
2016+ |
QFN |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENASES |
24+ |
QFN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
24+ |
QFN |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
1049+ |
WDFN8 |
6004 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2016 |
WPAK |
633 |
原装现货支持BOM配单服务 |
|||
RENESAS |
2511 |
WDFN8 |
4230 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
2450+ |
WDFN8 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS/瑞萨 |
24+ |
WPAK |
4128 |
只做原厂渠道 可追溯货源 |
|||
RENESAS/瑞萨 |
2402+ |
DFN8 |
8324 |
原装正品!实单价优! |
RJK0389DPA规格书下载地址
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RJK0389DPA数据表相关新闻
RJK0652DPB-00#J5
进口代理
2023-8-25RJH60F7DPQ-A0
RJH60F7DPQ-A0 ，全新原装当天发货或门市自取0755-82732291.
2020-1-13RJK03C9DNS-00-J5
RJK03C9DNS-00-J5 深圳市拓亿芯电子有限公司，专业代理，分销世界名牌电子元器件，是一家 专业化，品牌化的电子元器件，质量第一，诚信经营。
2019-3-7RJK0366DPA-01-J0
RJK0366DPA-01-J0 深圳市拓亿芯电子有限公司，专业代理，分销世界名牌电子元器件，是一家 专业化，品牌化的电子元器件，质量第一，诚信经营。
2019-3-7RJK03B7DPA-00-J53
RJK03B7DPA-00-J53 深圳市拓亿芯电子有限公司，专业代理，分销世界名牌电子元器件，是一家 专业化，品牌化的电子元器件，质量第一，诚信经营。
2019-3-7RJK0365DPA原装现货
瀚佳科技(深圳)有限公司 专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-9
DdatasheetPDF页码索引
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