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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg | RENESAS 瑞萨 |   | ||
Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：88.1 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：91.42 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
25+ |
TO247 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
RENESAS/瑞萨 |
24+ |
TO247 |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
15+ |
TO-247 |
6 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
17+ |
TO-3P |
6200 |
100%原装正品现货 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
2447 |
TO-247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
RENESAS |
24+ |
TO-3P |
3000 |
全新原装环保现货 |
|||
RenesasElectronics |
24+ |
NA |
3462 |
进口原装正品优势供应 |
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瀚佳科技(深圳)有限公司 专业一站式全套配单服务 联系电话0755-23140719/15323480719（微信同号）
2019-1-9
DdatasheetPDF页码索引
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