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RJH60D2DPP价格
参考价格：￥8.1154
型号：RJH60D2DPP-M0#T2 品牌：Renesas 备注：这里有RJH60D2DPP多少钱，2025年最近7天走势，今日出价，今日竞价，RJH60D2DPP批发/采购报价，RJH60D2DPP行情走势销售排行榜，RJH60D2DPP报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
600V-12A-IGBTApplication:Inverter Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(100nstyp.)inonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=80ns | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  |   | |
SiliconNChannelIGBTcation:Inverter SiliconNChannelIGBTApplication:Inverter Features Shortcircuitwithstandtime(5µstyp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(100nstyp.)inonepackage Trenchgateandthinwa | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTcation:Inverter SiliconNChannelIGBTApplication:Inverter Features Shortcircuitwithstandtime(5µstyp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) Builtinfastrecoverydiode(100nstyp.)inonepackage Trenchgateandthinwa | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
包装：管件 描述：IGBT 600V 10A TO-220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
600V-12A-IGBTApplication:Inverter 文件：120.82 Kbytes Page：10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 25A 27.2W TO220FL 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
SiliconNChannelIGBTApplication:Inverter 文件：88.4 Kbytes Page：8 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
600V-12A-IGBTApplication:Inverter 文件：108.44 Kbytes Page：10 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.7Vtyp.(atIC=12A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree | EIC EIC discrete Semiconductors |  | | |
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR 文件：73.52 Kbytes Page：4 Pages | EIC EIC discrete Semiconductors | | | |
SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR 文件：78.26 Kbytes Page：4 Pages | EIC EIC discrete Semiconductors | | | |
SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR 文件：61.72 Kbytes Page：4 Pages | EIC EIC discrete Semiconductors | | |
RJH60D2DPP产品属性
- 类型
描述
- 型号
RJH60D2DPP
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT
- cation
Inverter
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO-263 |
10000 |
公司现货 |
|||
RENESAS |
17+ |
TO220 |
60000 |
保证进口原装可开17%增值税发票 |
|||
RENESAS/瑞萨 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
|||
RENESAS/瑞萨 |
24+ |
TO263 |
27950 |
郑重承诺只做原装进口现货 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
2023+ |
TO-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
269 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
1932+ |
TO-263 |
471 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
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RJH60D2DPP规格书下载地址
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DdatasheetPDF页码索引
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