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RJH60D2DPP价格
参考价格：￥8.1154
型号：RJH60D2DPP-M0#T2 品牌：Renesas 备注：这里有RJH60D2DPP多少钱，2026年最近7天走势，今日出价，今日竞价，RJH60D2DPP批发/采购报价，RJH60D2DPP行情走势销售排行榜，RJH60D2DPP报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
600V - 12A - IGBT Application: Inverter Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 80 ns | RENESAS 瑞萨 |   | ||
Silicon N Channel IGBT cation: Inverter Silicon N Channel IGBT Application: Inverter Features Short circuit withstand time (5µs typ.) Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wa | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT cation: Inverter Silicon N Channel IGBT Application: Inverter Features Short circuit withstand time (5µs typ.) Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wa | RENESAS 瑞萨 | | ||
IGBT 600V 10A TO-220 | RENESAS 瑞萨 | | ||
包装：管件 描述：IGBT 600V 10A TO-220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
IGBTs | RENESAS 瑞萨 | | ||
600V - 12A - IGBT Application: Inverter 文件：120.82 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
IGBTs | RENESAS 瑞萨 | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 25A 27.2W TO220FL 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
Silicon N Channel IGBT Application: Inverter 文件：88.4 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
600V - 12A - IGBT Application: Inverter 文件：108.44 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = | RENESAS 瑞萨 | | ||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free | EIC | | ||
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR 文件：73.52 Kbytes Page：4 Pages | EIC | | ||
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR 文件：78.26 Kbytes Page：4 Pages | EIC | | ||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR 文件：61.72 Kbytes Page：4 Pages | EIC | |
RJH60D2DPP产品属性
- 类型
描述
- 型号
RJH60D2DPP
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT
- cation
Inverter
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
25+23+ |
TO-220F |
34854 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
24+ |
TO263 |
27950 |
郑重承诺只做原装进口现货 |
|||
RENESAS/瑞萨 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
17+ |
TO220 |
60000 |
保证进口原装可开17%增值税发票 |
|||
RENESAS |
1932+ |
TO-263 |
471 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
2023+ |
TO-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENESAS/瑞萨 |
24+ |
TO-220F |
60000 |
||||
RENESAS |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
23+ |
TO220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
RJH60D2DPP规格书下载地址
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DdatasheetPDF页码索引
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