位置：首页 > IC中文资料第2959页 > RFP50N05L_Q
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=28mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
TMOSIVPOWERFIELDEFFECTTRANSISTORS 文件：224.09 Kbytes Page：6 Pages | MotorolaMotorola, Inc 摩托罗拉 |  | | |
TMOSIVPOWERFIELDEFFECTTRANSISTORS 文件：224.09 Kbytes Page：6 Pages | MotorolaMotorola, Inc 摩托罗拉 | | | |
TMOSIVPOWERFIELDEFFECTTRANSISTORS 文件：224.09 Kbytes Page：6 Pages | MotorolaMotorola, Inc 摩托罗拉 | | |
RFP50N05L_Q产品属性
- 类型
描述
- 型号
RFP50N05L_Q
- 功能描述
MOSFET 50V/50a/0.022Ohm NCh Logic Level
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
M/A-COM |
2018+ |
SMD |
5000 |
M/A-COM专营品牌绝对进口原装假一赔十 |
|||
ON/安森美 |
24+ |
TO3P |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
BUSSMAN |
2021+ |
N/A |
6800 |
只有原装正品 |
|||
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
||||
ON |
23+ |
TO-218 |
6893 |
||||
MITSUBISHI/三菱 |
23+ |
244 |
现货供应 |
||||
MITSUBISHI/三菱 |
15238 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||||
ON/安森美 |
23+ |
TO-3P |
6000 |
原装正品，支持实单 |
|||
ON-安森美 |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
MOT |
N/A |
12950 |
RFP50N05L_Q芯片相关品牌
RFP50N05L_Q规格书下载地址
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DdatasheetPDF页码索引
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