TMOS IV POWER FIELD EFFECT TRANSISTORS

文件：224.09 Kbytes Page：6 Pages

TMOS IV POWER FIELD EFFECT TRANSISTORS

TMOS IV POWER FIELD EFFECT TRANSISTORS

文件：224.09 Kbytes Page：6 Pages

50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri

50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri