位置:首页 > IC中文资料第1385页 > MTP50N05E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTP50N05E | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | ||
N-Channel 60-V (D-S) MOSFET 文件:979.64 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r | INTERSIL | |||
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri | FAIRCHILD 仙童半导体 | |||
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri | INTERSIL | |||
50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching r | INTERSIL | |||
50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) dri | FAIRCHILD 仙童半导体 |
MTP50N05E产品属性
- 类型
描述
- 型号
MTP50N05E
- 制造商
Motorola Inc
- 功能描述
50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
TO-220 |
100821 |
||||
MOT |
25+ |
16 |
公司优势库存 热卖中!! |
||||
ON |
26+ |
TO-220 |
6893 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
MOT |
24+ |
41 |
|||||
MOTOROLA/摩托罗拉 |
2447 |
TO220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MOTOROLA |
24+ |
TO220 |
65200 |
一级代理/放心采购 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOTOROLA/摩托罗拉 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
VBSEMI/台湾微碧 |
23+ |
TO220AB |
50000 |
全新原装正品现货,支持订货 |
|||
VBsemi |
25+ |
TO252 |
3950 |
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类型 描述 选取全部项目 类别 电缆,电线 - 管理 电缆扎带 - 支座和附件 制造商 Panduit Corp 系列 MTP 零件状态 有源 类型 多开 安装类型 螺钉 - #6 大小/尺寸 4.25 长 x 0.50 宽 x 0.12 高(107.9mm x 12.7mm x 3.0mm) 配套使用产品/相关产品 M,I,S 束带 材料 尼龙 颜色 天然
2019-10-30
DdatasheetPDF页码索引
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