14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE™ Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering S

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

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N-Channel 60 V(D-S) MOSFET

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Trans MOSFET N-CH 50V 14A 3-Pin(3+Tab) TO-220AB Rail

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature

SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature