14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE™ Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering S

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Trans MOSFET N-CH 50V 14A 3-Pin(3+Tab) TO-220AB Rail

N-Channel 60 V(D-S) MOSFET

文件：1.08942 Mbytes Page：8 Pages

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

文件：213.77 Kbytes Page：8 Pages

Fast Switching

FEATURES • Drain Current ID= 14A@ TC=25℃ • Drain Source Voltage- : VDSS= 50V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) • Fast Switching APPLICATIONS • Switch regulators • Switching converters motor drivers and relay drivers

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

N-Channel 60 V (D-S) MOSFET

文件：1.62817 Mbytes Page：7 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.0023 Mbytes Page：8 Pages