SIPMOS Power Transistor

SIPMOS® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/d trated • 175°C operating temperature

SIPMOS Power Transistor

Fast Switching

FEATURES • Drain Current ID= 14A@ TC=25℃ • Drain Source Voltage- : VDSS= 50V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) • Fast Switching APPLICATIONS • Switch regulators • Switching converters motor drivers and relay drivers

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

N-Channel 60 V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

文件：1.0023 Mbytes Page：8 Pages