型号 功能描述 生产厂家&企业 LOGO 操作
RFP14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features •14A,50V •rDS(ON)=0.100Ω •TemperatureCompensatingPSPICE™Model •CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits •PeakCurrentvsPulseWidthCurve •UISRatingCurve •175oCOperatingTemperature •RelatedLiterature -TB334“GuidelinesforSolderingS

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel60V(D-S)MOSFET

文件:1.08942 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

文件:213.77 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

FastSwitching

FEATURES •DrainCurrentID=14A@TC=25℃ •DrainSourceVoltage- :VDSS=50V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max) •FastSwitching APPLICATIONS •Switchregulators •Switchingconvertersmotordriversandrelaydrivers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-Channel60V(D-S)MOSFET

文件:1.62817 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel60V(D-S)MOSFET

文件:1.0023 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

RFP14N05产品属性

  • 类型

    描述

  • 型号

    RFP14N05

  • 功能描述

    MOSFET TO-220AB N-Ch Power

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HARRIS/哈里斯
23+
NA/
3950
原厂直销,现货供应,账期支持!
HARRIS/哈里斯
24+
TO-220
990000
明嘉莱只做原装正品现货
INTESIL
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
HARRIS
TO220
893993
集团化配单-有更多数量-免费送样-原包装正品现货-正规
INTERSIL/FSC
23+
TO-220
28610
FAIRCHILD/仙童
2404+
TO-220
3300
现货正品原装,假一赔十
onsemi(安森美)
23+
TO-220
8075
支持大陆交货,美金交易。原装现货库存。
HAR
N/A
3250
INTERSIL
17+
TO-220
6200
HARRIS
21+
TO220
12588
原装正品,自己库存 假一罚十

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