14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel 60 V (D-S) MOSFET

文件：961.31 Kbytes Page：7 Pages

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=14A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60V N-Channel MOSFET

Features Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve • 175℃ Operating Temperature VDS (V) = 60V •• RDS(ON)

N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175 o C Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE™ Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering S

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE™ Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering S

N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175 o C Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID=14A@ TC=25℃ Drain Source Voltage -VDSS= 50V(Min) Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60V N-Channel MOSFET

Features Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve • 175℃ Operating Temperature VDS (V) = 60V •• RDS(ON)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ

Features • 14A, 50V • rDS(ON) = 0.100Ω • Temperature Compensating PSPICE® Model • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175 o C Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching re

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

文件：213.77 Kbytes Page：8 Pages

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

文件：213.77 Kbytes Page：8 Pages

14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

文件：213.77 Kbytes Page：8 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.00335 Mbytes Page：8 Pages

N 沟道逻辑电平功率 MOSFET 50V，14A，100mΩ

N-Channel 60 V (D-S) MOSFET

文件：1.0045 Mbytes Page：8 Pages

MOSFET N-CH 50V 14A TO-252AA

Fast Switching

FEATURES • Drain Current ID= 14A@ TC=25℃ • Drain Source Voltage- : VDSS= 50V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) • Fast Switching APPLICATIONS • Switch regulators • Switching converters motor drivers and relay drivers

N-Channel 60 V (D-S) MOSFET

文件：1.62817 Mbytes Page：7 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.0023 Mbytes Page：8 Pages