-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These ty

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

100V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

100V P-Channel MOSFET

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

Heavy duty switches & pilot lights offer both variety and reliability Endures harsh environments

文件：13.85927 Mbytes Page：51 Pages

P-Channel QFET짰 MOSFET -100 V, -8.0 A, 185 m廓

文件：1.23782 Mbytes Page：8 Pages

P-Channel QFET짰 MOSFET -100 V, -8.0 A, 185 m廓

文件：1.23782 Mbytes Page：8 Pages