FQD8P10价格
参考价格：￥1.7893
型号：FQD8P10TM 品牌：Fairchild 备注：这里有FQD8P10多少钱，2026年最近7天走势，今日出价，今日竞价，FQD8P10批发/采购报价，FQD8P10行情走势销售排行榜，FQD8P10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQD8P10 | 100V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 |   | |
FQD8P10 | P-Channel QFET짰 MOSFET -100 V, -6.6 A, 530 m廓 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | |
FQD8P10 | 功率 MOSFET，P 沟道，QFET®，-100 V，-6.6 A，530 mΩ，DPAK 该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-6.6A, -100V, RDS(on)= 530mΩ（最大值）@VGS = -10 V, ID = -3.3A栅极电荷低（典型值：12nC)\n•低 Crss（典型值30pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested; | ONSEMI 安森美半导体 | | |
P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
100V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -100V, ID= -13A RDS(ON) | BYCHIP 百域芯 | | ||
-100V，-6.6A，530mΩ，DPAK，P 沟道 QFET® 这些 P 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合音频放大器、高效开关DC/DC转换器以及DC电机控制等低压应用。 •6.6 A、-100 V、RDS(on) = 0.53O (VGS = -10 V)\n•低栅极电荷（典型值12 nC）\n•低Crss（典型值30pF）\n•快速开关\n•100% 经过雪崩击穿测试\n•提高了 dv/dt 性能\n•符合 AEC Q101 标准\n•符合 RoHS 标准; | ONSEMI 安森美半导体 | | ||
100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance | ONSEMI 安森美半导体 | | ||
丝印代码：AP15P10DXXXYYYY；-100V P-Channel Enhancement Mode MOSFET 文件：1.34872 Mbytes Page：5 Pages | LEIDITECH 雷卯电子 | | ||
100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
100V P-Channel MOSFET Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av | FAIRCHILD 仙童半导体 | | ||
100V P-Channel MOSFET 文件：662.86 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | |
FQD8P10产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Channel Polarity：
P-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
-100
- VGS Max (V)：
±30
- VGS(th) Max (V)：
-4
- ID Max (A)：
-6.6
- PD Max (W)：
44
- RDS(on) Max @ VGS = 10 V(mΩ)：
530
- Qg Typ @ VGS = 10 V (nC)：
12
- Ciss Typ (pF)：
360
- Package Type：
DPAK-3/TO-252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2023+ |
SOT-252 |
11091 |
十五年行业诚信经营,专注全新正品 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
25+23+ |
TO252 |
8142 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCILD |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
24+ |
TO-252(DPAK) |
8866 |
||||
ONSEMI |
25+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
ON |
23+ |
TO-252 |
30000 |
全网最低/原装现货 |
|||
FAIRCHILD |
26+ |
Sot-143 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
原厂 |
23+ |
TO252 |
5000 |
原装正品,假一罚十 |
|||
FAIRCHILD/仙童 |
24+ |
TO252 |
9600 |
原装现货,优势供应,支持实单! |
FQD8P10规格书下载地址
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FQD8P10数据表相关新闻
FQD8P10TM深圳原装进口无铅现货
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2021-2-21FQD8P10TM正规报关 原装现货
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DdatasheetPDF页码索引
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