位置：首页 > IC中文资料第1320页 > RFH30N15
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RFH30N15 | POWER MOS FIELD EFFECT TRANSISTORS 文件：432.1 Kbytes Page：8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
Fast Switching 文件：49.93 Kbytes Page：2 Pages | ISC 无锡固电 | |
RFH30N15产品属性
- 类型
描述
- 型号
RFH30N15
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JST |
60 |
代理优势渠道,有上都有,只有原装,实单给接受价! |
|||||
JST |
21+ |
12588 |
连接器 |
||||
哈里斯 |
06+ |
TO-247 |
2000 |
原装库存 |
|||
24+ |
N/A |
3110 |
|||||
INF |
22+ |
TO |
25000 |
只做原装进口现货,专注配单 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
TE/泰科 |
2508+ |
/ |
226570 |
一级代理，原装现货 |
|||
INTERSIL/FSC |
23+ |
TO-218 |
28610 |
||||
INF |
22+ |
TO |
6000 |
十年配单,只做原装 |
|||
JST/日压 |
22+ |
连接器 |
748228 |
代理-优势-原装-正品-现货*期货 |
RFH30N15规格书下载地址
RFH30N15参数引脚图相关
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DdatasheetPDF页码索引
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