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型号 功能描述 生产厂家 企业 LOGO 操作
30N15

Fast Switching

文件:49.93 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:30N150;Single N-channel Trench MOSFET 30V 15mΩ 29A

FEATURES • Trench power MOSFET technology • N-channel, logic level • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • DC-DC Converter • Load Switch Applications

MGCHIP

30A, 150V N-CHANNEL POWER MOSFET

UTC

友顺

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Power MOSFET

文件:448.39 Kbytes Page:8 Pages

CYSTEKEC

全宇昕科技

POWER MOS FIELD EFFECT TRANSISTORS

文件:432.1 Kbytes Page:8 Pages

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30N15产品属性

  • 类型

    描述

  • VGS(±V):

    ±30

  • ID(A):

    30

  • RDS(ON)MAX.(mΩ)atVGS=10V:

    80

  • CISSTYP.(pF):

    993.4

  • COSSTYP.(pF):

    214.7

  • CRSSTYP.(pF):

    13.5

  • QgTYP.(nC):

    28.7

  • QgsTYP.(nC):

    11.4

  • QgdTYP.(nC):

    7.4

  • VGS(th)(V)MIN.:

    2

  • VGS(th)(V)MAX.:

    4

  • TrrTYP.(nS):

    98.6

  • QrrTYP.(nC):

    700

  • Package:

    TO-220F1_TO-220F2

更新时间:2026-7-24 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-3
8000
只做原装现货
IR
23+
TO-3
7000
UTC/友顺
24+
TO-220F2
50000
只做原装,欢迎询价,量大价优
IR
22+
TO-3
6000
终端可免费供样,支持BOM配单
UTC/友顺
25+
TO-220F2
50000
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
UTC/友顺
25+
TO-220F2
50000
原装现货,客户工厂料

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