型号 功能描述 生产厂家 企业 LOGO 操作
CEP30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

CEP30N15L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

CEP30N15L

N Channel MOSFET

CET

华瑞

CEP30N15L

N-Channel MOSFET uses advanced trench technology

文件:1.23099 Mbytes Page:5 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

Fast Switching

文件:49.93 Kbytes Page:2 Pages

ISC

无锡固电

CEP30N15L产品属性

  • 类型

    描述

  • 型号

    CEP30N15L

  • 制造商

    CET

  • 制造商全称

    Chino-Excel Technology

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-1-28 14:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
CET
21+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET/華瑞
2022+
TO-220
50000
原厂代理 终端免费提供样品
TI
24+
VQFN32
22940
公司现货库存,支持实单
CET/華瑞
24+
TO-220
60000
CET
2026+
TO-220
31500
原装正品,假一罚十!
CET
26+
VQFN20
86720
全新原装正品价格最实惠 承诺假一赔百
CET
23+
TO-220
10065
原装正品,有挂有货,假一赔十
CET/華瑞
23+
TO-TO-220
12300
原厂授权一级代理,专业海外优势订货,价格优势、品种
24+
N/A
69000
一级代理-主营优势-实惠价格-不悔选择

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