位置：首页 > IC中文资料第7205页 > PHD16N03LT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHD16N03LT | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 67mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 |   | |
PHD16N03LT | N-channel TrenchMOS??logic level FET 文件：92.88 Kbytes Page：12 Pages | Philips 飞利浦 | | |
PHD16N03LT | N-channel TrenchMOS logic level FET | NEXPERIA 安世 | | |
N-Channel Enhancement Mode Power MOSFET Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：667.81 Kbytes Page：5 Pages | MCC | |
PHD16N03LT产品属性
- 类型
描述
- 型号
PHD16N03LT
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
N-channel TrenchMOS⑩ logic level FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
恩XP |
25+ |
SOT428 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
PHI |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
恩XP |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
PH |
24+ |
SOT428TO-252 |
8866 |
||||
N |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
PHI |
1709+ |
TO-252/D- |
32500 |
普通 |
|||
恩XP |
23+ |
SOT428 |
8000 |
只做原装现货 |
|||
恩XP |
23+ |
SOT428 |
7000 |
||||
恩XP |
SOT252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
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PHD16N03LT规格书下载地址
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