REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer

1 Features 1• Excellent Temperature Drift Performance – 5 ppm/°C (max) from –40°C to +125°C • Extremely Low Noise – Total Noise: 5 μVRMS With 47-μF Capacitor – 1/f Noise (0.1 Hz to 10 Hz): 3 μVPP/V • Integrated ADC Drive Buffer – Low Output Impedance:

High-Precision Voltage Reference With Integrated ADC Drive Buffer

文件：2.35155 Mbytes Page：37 Pages

封装/外壳：8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SERIES 0.05% 8VSSOP 集成电路（IC） 电压基准

REF60xx High-Precision Voltage Reference With Integrated ADC Drive Buffer

1 Features 1• Excellent Temperature Drift Performance – 5 ppm/°C (max) from –40°C to +125°C • Extremely Low Noise – Total Noise: 5 μVRMS With 47-μF Capacitor – 1/f Noise (0.1 Hz to 10 Hz): 3 μVPP/V • Integrated ADC Drive Buffer – Low Output Impedance:

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

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