Low VF ??High-Speed Switching Diode

Diffused Junction Silicon Diode Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 1A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

Planar Ultrafast Rectifier, Fast trr type, 1A, 600V, 50ns, TP/TP-FA

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 1A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

Planar Ultrafast Rectifier

Planar Ultrafast Rectifier Fast trr type, 1A, 600V, 50ns, TP/TP-FA Features • High breakdown voltage (VRRM=600V) • Fast reverse recovery time • Low forward voltage (VF max=1.3V) • Low switching noise • Halogen free compliance

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode

文件：468.29 Kbytes Page：7 Pages

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode

文件：468.29 Kbytes Page：7 Pages

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：DIODE GEN PURP 600V 1A TP 分立半导体产品 二极管 - 整流器 - 单

Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode

文件：468.29 Kbytes Page：7 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：DIODE GEN PURP 600V 1A TPFA 分立半导体产品 二极管 - 整流器 - 单

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array?

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan