Schottky barrier diode

Applications Switching power supply Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability

Schottky barrier diode

文件：203.51 Kbytes Page：4 Pages

Schottky barrier diode

文件：324.1 Kbytes Page：4 Pages

Schottky barrier diode

文件：988.43 Kbytes Page：4 Pages

Schottky barrier diode

文件：324.1 Kbytes Page：4 Pages

Schottky barrier diode

文件：988.43 Kbytes Page：4 Pages

肖特基势垒二极管（AEC-Q101标准）

肖特基势垒二极管

Schottky barrier diode

文件：589.9 Kbytes Page：7 Pages

封装/外壳：TO-220-3 整包 包装：剪切带（CT）Digi-Reel® 得捷定制卷带管件 描述：40V, 15A, ITO-220AB, SCHOTTKY BA 分立半导体产品 二极管 - 整流器 - 阵列

Schottky Barrier Diodes

封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 60V TO220FN 分立半导体产品 二极管 - 整流器 - 阵列

Schottky barrier diode

文件：348.49 Kbytes Page：4 Pages

Schottky barrier diode

文件：996.27 Kbytes Page：4 Pages

Schottky barrier diode

文件：201.64 Kbytes Page：4 Pages

Schottky barrier diode

文件：348.49 Kbytes Page：4 Pages

Schottky barrier diode

文件：996.27 Kbytes Page：4 Pages

Schottky barrier diode

文件：534.21 Kbytes Page：7 Pages

Schottky barrier diode

文件：1.05747 Mbytes Page：4 Pages

Schottky barrier diode

文件：206.46 Kbytes Page：4 Pages

Schottky barrier diode

文件：1.05747 Mbytes Page：4 Pages

Schottky barrier diode

文件：590.86 Kbytes Page：7 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.