SCHOTTKY BARRIER DIODES

• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

SCHOTTKY BARRIER SWITCHING DIODE

Features • Ultra-Fast Switching Speed • High Reverse Breakdown Voltage • Low Forward Voltage Drop • Guard Ring Junction Protection Mechanical Data • Case: MiniMELF, Glass • Terminals: Solderable per MIL-STD-202, Method 208 • Marking: Cathode Band Only • Polarity: Cathode Band • Weight: 0

Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch

10-Bit, Low-Power, Rail-to-Rail Voltage-Output Serial DAC in SOT23

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AM/FM stereo radio circuit

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