位置:首页 > IC中文资料 > LL5711

型号 功能描述 生产厂家 企业 LOGO 操作
LL5711

SCHOTTKY BARRIER SWITCHING DIODE

Features • Ultra-Fast Switching Speed • High Reverse Breakdown Voltage • Low Forward Voltage Drop • Guard Ring Junction Protection Mechanical Data • Case: MiniMELF, Glass • Terminals: Solderable per MIL-STD-202, Method 208 • Marking: Cathode Band Only • Polarity: Cathode Band • Weight: 0

DIODES

美台半导体

LL5711

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

EIC

LL5711

Small-Signal Diode Schottky Diodes

Features ◆ For general purpose applications ◆ Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ◆ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch

GOOD-ARK

固锝电子

LL5711

Schottky Diodes

Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switch

GE

LL5711

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

JINANJINGHENG

晶恒集团

LL5711

SCHOTTKY BARRIER DIODES

VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diode

SYNSEMI

LL5711

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast

JINGHENG

晶恒

LL5711

70V Detection switch tube

文件:250.516 Kbytes Page:1 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

LL5711

SCHOTTKY BARRIER SWITCHING DIODES

文件:250.516 Kbytes Page:1 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

LL5711

SMALL SIGNAL SCHOTTKY DIODES

文件:53.34 Kbytes Page:2 Pages

BILIN

银河微电

LL5711

Schottky Barrier Diode

文件:498.52 Kbytes Page:2 Pages

LUGUANG

鲁光电子

LL5711

0.015A,70V,Surface Mount Small Signal Schottky Diodes

GALAXY

银河微电

SCHOTTKY BARRIER DIODES

• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 • 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 • SCHOTTKY BARRIER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

CDI-DIODE

10-Bit, Low-Power, Rail-to-Rail Voltage-Output Serial DAC in SOT23

文件:760.95 Kbytes Page:9 Pages

MAXIM

美信

AM/FM stereo radio circuit

文件:520.89 Kbytes Page:28 Pages

PHILIPS

飞利浦

LL5711产品属性

  • 类型

    描述

  • VRRM max (V):

    70

  • IF max (A):

    0.015

  • VF (V) max:

    1

  • @_IF (A):

    0.015

  • IFSM max (A):

    2

  • IR (uA) max:

    0.2

  • @_VR (V):

    50

  • trr max (ns):

    1

  • PD (mW):

    400

  • Package Outlines:

    MINI-MELF

更新时间:2026-7-23 20:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GS
22+
MELF-D3516-1406
6868
全新正品现货 有挂就有现货
ST
25+
LL-34
20000
原装,请咨询
ST/意法
22+
LL34
20000
华拓芯城用芯经营
TAYCHIPST
23+
LL34
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
26+
LL-34
60000
只有原装 可配单
ST
25+
LL-34
20000
原装
ST
2511
LL-34
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价

LL5711数据表相关新闻