Features

• For general purpose applications

• Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring.

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices, steering,

biasing and coupling diodes for fast switching

and low logic level applications.

• This diode is also available in the DO-35 case

with type designation 1N5711 and 1N6263.