Silicon Power Rectifier

Silicon Power Rectifier • Soft recovery • Glass Passivated Die • 2500 Amps Surge Rating • Glass to metal seal construction • VRRM to 1600V

封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Diode Switching 500V 150A 2-Pin DO-8

封装/外壳：DO-205AA，DO-8，接线柱 包装：散装 描述：STD RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

POWER TRANSISTORS(16A,100-160V,125W)

16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts)

文件：98.45 Kbytes Page：4 Pages