N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switchin

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-s

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PMBF170 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applica

N-channel FETs

DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry.

RF Manual 16th edition

N-channel FETs

DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry.

RF Manual 16th edition

N-channel FETs

DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry.

RF Manual 16th edition

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel field-effect transistor

DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel field-effect transistors

DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel field-effect transistors

DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel field-effect transistors

DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. FEATURES • Low noise • Interchangeability of drain and source connections • High gain.

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltag

RF Manual 16th edition

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltag

RF Manual 16th edition

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a SOT23 envelope. Intended for use in applications such as analog switches, choppers and commutators and in audio amplifiers. FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltag

RF Manual 16th edition

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES • High-speed switching • Interchangeability of drain and source connections

RF Manual 16th edition

N-channel junction FETs Rev. 4 ??20 September 2011

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES • High-speed switching • Interchangeability of drain and source connections

N-channel junction FETs Rev. 4 ??20 September 2011

RF Manual 16th edition

N-channel junction FETs Rev. 4 ??20 September 2011

N-channel junction FETs

DESCRIPTION Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids. FEATURES • High-speed switching • Interchangeability of drain and source connections

RF Manual 16th edition

N-channel junction FETs Rev. 4 ??20 September 2011

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

RF Manual 16th edition

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

RF Manual 16th edition

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

RF Manual 16th edition

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

RF Manual 16th edition

N-channel field-effect transistors

DESCRIPTION N-channel symmetrical junction field-effect transistor in a SOT23 package. FEATURES • High speed switching • Interchangeability of drain and source connections • High impedance. APPLICATIONS • Analog switches • Choppers, multiplexers and commutators • Audio amplifiers.

N-channel field-effect transistors

DESCRIPTION N-channel symmetrical junction field-effect transistor in a SOT23 package. FEATURES • High speed switching • Interchangeability of drain and source connections • High impedance. APPLICATIONS • Analog switches • Choppers, multiplexers and commutators • Audio amplifiers.

N-channel field-effect transistors

DESCRIPTION N-channel symmetrical junction field-effect transistor in a SOT23 package. FEATURES • High speed switching • Interchangeability of drain and source connections • High impedance. APPLICATIONS • Analog switches • Choppers, multiplexers and commutators • Audio amplifiers.

N-channel silicon field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low noise • Interchangeability of drain and source connections • High gain. APPLICATIONS • AM input stage in car radios • VHF amplifiers • Oscillators and mixers.

RF Manual 16th edition

N-channel silicon field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low noise • Interchangeability of drain and source connections • High gain. APPLICATIONS • AM input stage in car radios • VHF amplifiers • Oscillators and mixers.

RF Manual 16th edition

N-channel silicon field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low noise • Interchangeability of drain and source connections • High gain. APPLICATIONS • AM input stage in car radios • VHF amplifiers • Oscillators and mixers.

RF Manual 16th edition

Dual N-channel field-effect transistor

General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. Features ■ Two field effect transistors in a single package ■ Low noise ■ Interchangeability of drain and source connections ■ High gain. Applications ■ AM input stage in car radios ■ VHF

RF Manual 16th edition

N-channel TrenchMOS intermediate level FET

N沟道FET

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：JFET N-CH 40V 250MW SOT23 分立半导体产品 晶体管 - JFET

PMBF4392

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：JFET N-CH 40V 250MW SOT23 分立半导体产品 晶体管 - JFET