N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-s

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PMBF170 in SOT23. 2. Features n TrenchMOS™ technology n Very fast switching n Logic level compatible n Subminiature surface mount package. 3. Applica

N-channel TrenchMOS intermediate level FET

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast r

ROD SEALS

DESCRIPTION The BECA 170 - 179 profiles are double acting composite rod seals composed of a filled PTFE friction ring and pre-tightened rubber O'Ring. They can be mounted in the grooves of the O'Rings. Option of connecting the seal to 1 or 2 back-up rings. APPLICATIONS Machine tools

Hard Wired 170 Series

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Custom Power Modules

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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