N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switchin

N-channel enhancement mode vertical D-MOS transistor

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 6.0 Twists/foot (m

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 18 (41/34) AWG Bare Copper 0.043 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.063 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 2 BLUE 3 BLACK 2) Cable Assembly 3 Components Cabled a) Twists: 6.0 Twists/foot (m

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

Precision Wirewound Resistors

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Smooth, high torque, roller ratchet handle

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