Single Pole OptoMOS Relay

Description PLA160 is a 300V, 50mA, 100Ω 1-Form-A relay. This performance leader features the fastest switching speed (50us) available in an OptoMOS relay. Features • Small 6 Pin SOP Package • Low Drive Power Requirements (TTL/CMOS Compatible) • No Moving Parts • High Reliability • Arc-Free

Single Pole, Normally Open OptoMOS Relay

Description PLA160 is a 300V, 50mA, 100 1-Form-A relay. This performance leader features the fastest switching speed (50s) available in an OptoMOS relay. Features • Fastest Switching OptoMOS Relay, 50s • 3750Vrms Input/Output Isolation • Low Drive Power Requirements (TTL/CMOS Compatible)

封装/外壳：6-SMD（0.300"，7.62mm） 包装：管件 描述：SSR RELAY SPST-NO 50MA 0-300V 继电器 固态继电器

封装/外壳：6-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NO 50MA 0-300V 继电器 固态继电器

Single Pole, Normally Open OptoMOS Relay

Description PLA160 is a 300V, 50mA, 100 1-Form-A relay. This performance leader features the fastest switching speed (50s) available in an OptoMOS relay. Features • Fastest Switching OptoMOS Relay, 50s • 3750Vrms Input/Output Isolation • Low Drive Power Requirements (TTL/CMOS Compatible)

Single Pole OptoMOS Relay

Description PLA160 is a 300V, 50mA, 100Ω 1-Form-A relay. This performance leader features the fastest switching speed (50us) available in an OptoMOS relay. Features • Small 6 Pin SOP Package • Low Drive Power Requirements (TTL/CMOS Compatible) • No Moving Parts • High Reliability • Arc-Free

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)