| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat)= 1.4 V typ. (at IC= 30 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf= 80 ns typ. (at IC= | RENESAS 瑞萨 |   | ||
600 V - 30 A - IGBT High Speed Power Switching Features ● Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) ● Trench gate and thin wafer technology ● High speed switching | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching 文件：88.06 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
66112 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS/瑞萨 |
25+ |
TO-247 |
32360 |
RENESAS/瑞萨全新特价RJH60F4DPK-00#T0即刻询购立享优惠#长期有货 |
|||
RENESAS |
11+ |
TO-3P |
25 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2450+ |
TO-3P |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS/瑞萨 |
10+ |
TO-3P |
58000 |
||||
RENESAS |
20+ |
TO-3P |
360 |
只做原装正品 |
|||
RENESAS |
TO-3P |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
RENESAS |
25+23+ |
TO-247 |
27178 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS原装 |
23+ |
TO-3P |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
RENESAS/瑞萨 |
24+ |
TO-3P |
9000 |
只做原装，欢迎询价，量大价优 |
PJH60F4规格书下载地址
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PJH60F4数据表相关新闻
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PJD45P04，全新原装当天发货或门市自取0755-82732291.
2019-10-7PJ-058AH
深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
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2019-3-28
DdatasheetPDF页码索引
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