N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopewithanelectricallyisolatedmountingtab.Thedeviceuses’trench’technologytoachievelowon-stateresistance. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •

PowerMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticfull-packenvelope.Thedevicefeatureshighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforus

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs

MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs TheUGN3055UHall-effectsensorisadigitalmagneticsensingICcapableofcommunicatingoveratwo-wirepower/signalbus.Usingasequentialaddressingscheme,thedevicerespondstoasignalonthebusandreturnsthediagnosticstatusoftheIC,as

WASHERSANDNUTS

[KEYSTONE] FIBRESHOULDERWASHERS HEXMACHINENUTS NYLONSHOULDERWASHER/BUSHINGS BLINDCAPTIVENUTS-PRESSFIT METRICMACHINENUTS

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor18(16/30)AWGTinnedCopper0.047 b)Insulation0.016Wall,Nom.PVC0.079+/-0.002 (1)Print ALPHAWIREE163869-*RUAWMSTYLES1569105C OR100780C300VVW-1IEC60332-118AWG ORCRUTR-6490CFT1CEROHS {0}*=FactoryCode

N-Channel30-V(D-S)MOSFET

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CustomerSpecification

文件：70.18 Kbytes Page：3 Pages