丝印代码：3055；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

丝印代码：3055；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

丝印代码：3055；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

丝印代码：3055；N-Channel MOSFET

文件：609.73 Kbytes Page：3 Pages

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

N-Channel 30-V (D-S) MOSFET

文件：959.93 Kbytes Page：8 Pages

Customer Specification

文件：70.18 Kbytes Page：3 Pages

包装：散装 描述：WASHER SHOULDER #6 NYLON 五金件，紧固件，配件 垫圈 - 套管，凸肩

丝印代码：3055L；N-Channel Enhancement Mode MOSFET

文件：873.32 Kbytes Page：4 Pages

丝印代码：3055L；Power MOSFET 3.0 A, 60 V, Logic Level, N?묬hannel SOT??23

文件：80.8 Kbytes Page：6 Pages

丝印代码：3055L；3.0 A, 60 V, Logic Level, N.Channel SOT??23

文件：79.23 Kbytes Page：6 Pages

丝印代码：3055L；Power MOSFET

文件：81.84 Kbytes Page：6 Pages

丝印代码：3055L；N-Channel Enhancement Mode MOSFET

文件：370.28 Kbytes Page：4 Pages

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

Aerospace & Defense Speed Sensors

High Temperature VRS Sensor, 6,4 mm [0.250 in] M8 diameter, 4.7 Vp-p, -40 ºC to 230 ºC [-40 ºF to 450 ºF], 36 DP (module 0.70) or coarser, 70 kHz, 23 mm [0.90 in] approx. length.High Temperature VRS sensors are designed for use in applications where the sensor is exposed to temperatures up to 260 °C ·Self-powered operation \n·Direct conversion of actuator speed to output frequency \n·Simple installation \n·No moving parts \n·Designed for use over a wide range of speeds \n·Adaptable to a wide variety of configurations \n·Customized VRS products for unique speed sensing applications \n·Housing di;

N-Channel Enhancement Mode Field Effect Transistor

FEATURES • 60V, 3.7A, RDS(ON) = 100 mΩ @VGS = 10V. RDS(ON) = 120 mΩ @VGS = 4.5V. • High dense cell design for low RDS(ON) • Rugged and reliable. • SOT-89 Package

60V N -Channel MOSFET

Features • Lower RDS(on) • Lower VDS(on) • Tighter VSD Specification • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge

18 (SOLID) AWG Tinned Copper

文件：406.21 Kbytes Page：4 Pages

18 (SOLID) AWG Tinned Copper

文件：406.21 Kbytes Page：4 Pages

包装：散装 描述：KNOB KNURLED 5/16\ 五金件，紧固件，配件 旋钮

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：141.04 Kbytes Page：4 Pages

N-Channel Enhancement Mode Field Effect Transistor

18 (SOLID) AWG Tinned Copper

文件：406.21 Kbytes Page：4 Pages

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain–to–source diode with a fast recovery time

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.15 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles t

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955