位置：首页 > IC中文资料第1401页 > PHU101NQ03L
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TrenchMOSlogiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP101NQ03LTinSOT78(TO-220AB) PHU101NQ03LTinSOT533(I-PAK) Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   | |
N-channelTrenchMOSlogiclevelFET | ETC 知名厂家 | ETC | | |
N-Channel30-V(D-S)MOSFET 文件：994.73 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
TrenchMOS??logiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
TrenchMOS??logiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
N-channelTrenchMOSlogiclevelFET | ETC 知名厂家 | ETC | | |
N-channelTrenchMOSlogiclevelFET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
PHU101NQ03L产品属性
- 类型
描述
- 型号
PHU101NQ03L
- 功能描述
MOSFET RAIL PWR-MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
0649+ |
TO-251 |
19 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PH |
23+ |
SOT533 |
21000 |
全新原装 |
|||
恩XP |
1822+ |
TO-251 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PHI |
23+ |
TO-251 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
N |
25+ |
TO-251 |
35628 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
PHI |
24+ |
TO-251 |
150 |
只做原厂渠道 可追溯货源 |
|||
PHI |
2025+ |
TO-251 |
5185 |
全新原厂原装产品、公司现货销售 |
|||
NEXPERIA/安世 |
25+ |
SOT533 |
860000 |
明嘉莱只做原装正品现货 |
|||
PHI |
24+ |
NA/ |
11100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PH |
24+ |
SOT533TO-251 |
8866 |
PHU101NQ03L芯片相关品牌
PHU101NQ03L规格书下载地址
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DdatasheetPDF页码索引
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