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N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHT4NQ10LTinSOT223. Features ■TrenchMOS™technology ■Fastswitching ■Lowon-stateresistance ■Surfacemountpackage ■Logiclevelcompatible.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

N-Channel100-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFETs •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplications. 1.2Featuresandbenefits Lowcond

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effecttransistorinaplasticenvelopeusing’trench’technology. FEATURES •Lowon-stateresistance •Fastswitching •Lowprofilesurfacemountpackage Applications:- •Motorandrelaydrivers •d.c.tod.c.converters

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

N-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
更新时间:2025-6-7 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
NA/
5050
原厂直销,现货供应,账期支持!
恩XP
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
恩XP
23+
TO-252
4500
全新原装、诚信经营、公司现货销售!
恩XP
12+
TO223
50000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEXPERIA/安世
24+
SOT-223
503329
免费送样原盒原包现货一手渠道联系
恩XP
23+
NA
6000
原装现货订货价格优势
恩XP
25+
SOT-223
880000
明嘉莱只做原装正品现货
PHI
23+
SOT223
65480
恩XP
25+23+
sot223
24044
绝对原装正品全新进口深圳现货
PHI
2025+
SOT223
3635
全新原厂原装产品、公司现货销售

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