N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHT4NQ10LT in SOT223. Features ■ TrenchMOS™ technology ■ Fast switching ■ Low on-state resistance ■ Surface mount package ■ Logic level compatible.

丝印代码：4NQ10L；N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications. 1.2 Features and benefits  Low cond

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

N-channel enhancement mode field-effect transistor

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Surface mount package. Applications ■ Primary side switch in DC to DC converters ■ High speed line driver ■ Fast gener

N-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES • Low on-state resistance • Fast switching • Low profile surface mount package Applications:- • Motor and relay drivers • d.c. to d.c. converters