丝印代码：0410PAB；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Red

40 V, 10 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669(LFPAK56) Surface-Mounted Device(SMD) power plastic package.\n NPN complement: PHPT60410NY • High thermal power dissipation capability\n• Suitable for high temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

40 V, 10 A PNP high power bipolar transistor

40 V, 10 A PNP high power bipolar transistor

丝印代码：0410PAB；40 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60410NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

40 V, 10 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60410NY-Q

封装/外壳：SC-100，SOT-669 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 10A LFPAK56 PWRSO8 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

丝印代码：0410NAB；40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

丝印代码：0410NAB；40 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

40 V, 10 A NPN high power bipolar transistor